Patent Number: 6,254,792

Title: Isotropic dry cleaning process for noble metal integrated circuit structures

Abstract: A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by contacting the microelectronic device structure with a cleaning gas including a reactive halide composition, e.g., XeF.sub.2, SF.sub.6, SiF.sub.4, Si.sub.2 F.sub.6 or SiF.sub.3 and SiF.sub.2 radicals. The method may be carried out in a batch-cleaning mode, in which fresh charges of cleaning gas are successively introduced to a chamber containing the residue-bearing microelectronic device structure. Each charge is purged from the chamber after reaction with the residue, and the charging/purging is continued until the residue has been at least partially removed to a desired extent. Alternatively, the cleaning gas may be continuously flowed through the chamber containing the microelectronic device structure, until the noble metal residue has been sufficiently removed.

Inventors: Van Buskirk; Peter C. (Newtown, CT), DiMeo, Jr.; Frank (New Milford, CT), Kirlin; Peter C. (Newtown, CT), Baum; Thomas H. (New Fairfield, CT)

Assignee: Advanced Technology Materials, Inc.

International Classification: C07F 15/00 (20060101); C23F 1/30 (20060101); C23C 16/18 (20060101); C23F 1/10 (20060101); C23C 16/40 (20060101); C30B 25/02 (20060101); H01L 21/02 (20060101); H01L 21/3213 (20060101); C23F 001/12 ()

Expiration Date: 07/03/2018