Patent Number: 6,254,794

Title: Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution

Abstract: A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and etching to remove the porous silicon layer by immersing in an etching solution.

Inventors: Sakaguchi; Kiyofumi (Atsugi, JP), Yonehara; Takao (Atsugi, JP), Sato; Nobuhiko (Atsugi, JP)

Assignee: Canon Kabushiki Kaisha

International Classification: H01L 21/762 (20060101); H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 21/20 (20060101); H01L 21/306 (20060101); H01L 021/302 ()

Expiration Date: 07/03/2018