Patent Number: 6,254,933

Title: Method of chemical vapor deposition

Abstract: A method of performing chemical vapor deposition which produces semiconductor crystalline thin films having small transition widths. The method involves the use of a cold-wall type reaction chamber that is equipped with a gas inlet at one end and a gas outlet at the other end and a semiconductor substrate support which supports a semiconductor substrate so that a main surface thereof is horizontal. A reactant gas is caused to flow horizontally through the reaction chamber to effect the growing of a crystalline thin film on the main surface of the semiconductor substrate. The semiconductor substrate is arranged within the reactor chamber within a distance W which is measured from a leading edge of the semiconductor substrate at a most upstream position along a direction toward the gas outlet where W indicates an internal width of the reaction chamber. The semiconductor substrate is also in a location having a W/G ratio of 15 or greater, where G represents a distance between the main surface of the semiconductor substrate and a ceiling of the reaction chamber.

Inventors: Habuka; Hitoshi (Gunma-ken, JP), Mayuzumi; Masanori (Gunma-ken, JP), Tate; Naoto (Camas, WA), Katayama; Masatake (Gunma-ken, JP)

Assignee: Shin-Etsu Handotai, Ltd.

International Classification: C30B 25/08 (20060101); C23C 16/455 (20060101); C30B 25/14 (20060101); C23C 016/00 ()

Expiration Date: 07/03/2018