Patent Number: 6,255,004

Title: III-V nitride semiconductor devices and process for the production thereof

Abstract: A device made of a III-V nitride compound semiconductor comprising a substrate of sapphire, a Si single crystal, a GaAs single crystal, or a GaP single crystal; a GaN single crystal film with a thickness not greater than 3 nm formed on the substrate; and at least one layer of a III-V nitride compound semiconductor formed on the GaN single crystal film. Also a device made of a III-V nitride compound semiconductor comprising a Si single crystal substrate having a natural oxide film; a SiOn film formed by partially nitriding the natural oxide film; and a layer of a III-V nitride compound semiconductor formed on the SiON film.

Inventors: Yoshida; Seikoh (Toride, JP)

Assignee: The Furukawa Electric Co., Ltd.

International Classification: H01L 21/02 (20060101); H01L 21/205 (20060101); H01L 33/00 (20060101); H01L 021/205 (); H01L 033/00 ()

Expiration Date: 07/03/2018