Patent Number: 6,255,121

Title: Method for fabricating ferroelectric field effect transistor having an interface insulator layer formed by a liquid precursor

Abstract: A method for forming an interface insulator layer in a ferroelectric FET memory, in which a liquid precursor is applied to a semiconductor substrate. Preferably, the liquid precursor is an enhanced metalorganic decomposition ("EMOD") precursor, applied using a liquid-source misted deposition technique. Preferably, the EMOD precursor solution applied to the substrate contains metal ethylhexanoates containing metal moieties in relative molar proportions for forming an interface insulator layer containing ZrO.sub.2, CeO.sub.2, Y.sub.2 O.sub.3 or (Ce.sub.1-x Zr.sub.x)O.sub.2, wherein 0.ltoreq.x.ltoreq.1.

Inventors: Arita; Koji (Colorado Springs, CO), Hayashi; Shinichiro (Osaka, JP), Otsuki; Tatsuo (Osaka, JP), Paz de Araujo; Carlos A. (Colorado Springs, CO)

Assignee: Symetrix Corporation

International Classification: H01L 21/02 (20060101); H01L 29/78 (20060101); H01L 21/28 (20060101); H01L 29/51 (20060101); H01L 29/40 (20060101); H01L 29/66 (20060101); H01L 21/314 (20060101); H01L 021/00 (); H01L 021/336 (); H01L 021/31 (); H01L 021/469 ()

Expiration Date: 07/03/2018