Patent Number: 6,255,122

Title: Amorphous dielectric capacitors on silicon

Abstract: High-capacity capacitors and gate insulators exhibiting moderately high dielectric constants with surprisingly low leakage using amorphous or low temperature films of perovskite type oxides including a titanate system material such as barium titanate, strontium titanate, barium strontium titanate (BST), lead titanate, lead zirconate titanate, lead lanthanum zirconate titanate, barium lanthanum titanate, a niobate, aluminate or tantalate system material such as lead magnesium niobate, lithium niobate lithium tantalate, potassium niobate and potassium tantalum niobate, a tungsten-bronze system material such as barium strontium niobate, lead barium niobate, barium titanium niobate, and Bi-layered perovskite system material such as strontium bismuth tantalate, bismuth titanate deposited directly on a silicon surface at temperatures about 450.degree. C. or less.

Inventors: Duncombe; Peter Richard (Peekskill, NY), Laibowitz; Robert Benjamin (Peekskill, NY), Neumayer; Deborah Ann (Danbury, CT), Shaw; Thomas McCarroll (Peekskill, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 21/02 (20060101); H01L 021/00 ()

Expiration Date: 07/03/2018