Patent Number: 6,255,137

Title: Method for making air pockets in an HDI context

Abstract: A method for making an HDI-connected circuit is described, which in a simple manner allows an air pocket, space, gap, or bubble to be formed over pressure- or dielectric-sensitive portions of a semiconductor chip. The method applies a layer of uncured adhesive over a dielectric film, and also over any electrical conductors deposited on the film. The adhesive is exposed through a mask to a laser beam, which selectively vaporizes the adhesive in the exposed regions, to define the air pocket region. The semiconductor chips are applied, electrode-side down, on the adhesive, with the sensitive regions registered with the pockets. The adhesive is cured, and conductive vias are formed through the dielectric film and the adhesive to make contact with the electrodes of the semiconductor chips. Other layers of HDI interconnect are then applied over the dielectric film, and interconnected by vias, if needed. Either before or after the step of making the conductive vias, the bodies of the semiconductor chips are encapsulated.

Inventors: Gorczyca; Thomas Bert (Schenectady, NY), Cole; Herbert Stanley (Burnt Hills, NY)

Assignee: Lockheed Martin Corp.

International Classification: H01L 21/02 (20060101); H01L 23/52 (20060101); H01L 23/16 (20060101); H01L 23/20 (20060101); H01L 21/60 (20060101); H01L 23/538 (20060101); H01L 021/44 ()

Expiration Date: 07/03/2018