Patent Number: 6,255,146

Title: Thin film transistor and a method of manufacturing thereof

Abstract: According to a method of manufacturing a thin film transistor (TFT), amorphous silicon is formed by ion-implanting either silicon or nitrogen into a region of polysilicon while a region located at the sidewall of a gate electrode is selectively left using the stepped portion of the gate electrode. Then, a heat treatment is applied to convert the amorphous silicon into polysilicon with the remaining polysilicon as a seed crystal. As a result, polysilicon having crystal grains of great grain size can be formed in uniform. Thus, the electric characteristics of a TFT can be improved with no difference in the electric characteristics between each TFT.

Inventors: Shimizu; Satoshi (Hyogo, JP), Ueno; Shuichi (Hyogo, JP), Maeda; Shigenobu (Hyogo, JP), Ipposhi; Takashi (Hyogo, JP)

Assignee: Mitsubishi Denki Kabushiki Kaisha

International Classification: H01L 21/02 (20060101); H01L 21/336 (20060101); H01L 27/11 (20060101); H01L 29/66 (20060101); H01L 29/786 (20060101); H01L 021/00 ()

Expiration Date: 07/03/2018