Patent Number: 6,255,147

Title: Silicon on insulator circuit structure with extra narrow field transistors and method of forming same

Abstract: A method of forming a narrow circuit component on a silicon on insulator (SOI) substrate includes silicon on insulator (SOI) substrate including forming a mask over the surface of a device layer to define an island region surrounded by a peripheral trench region. The mask is trimmed to reduce the size of the island and increase the size of the peripheral trench region. The peripheral trench region is then etched to isolate the island and a circuit component is formed therein

Inventors: Buynoski; Matthew S. (Palo Alto, CA)

Assignee: Advanced Micro Devices, Inc.

International Classification: H01L 21/762 (20060101); H01L 21/02 (20060101); H01L 21/336 (20060101); H01L 21/70 (20060101); H01L 021/84 ()

Expiration Date: 07/03/2018