Patent Number: 6,255,155

Title: Nonvolatile memory and method for fabricating the same

Abstract: Nonvolatile memory and method for fabricating the same, which can prevent damages to a diffusion region between a selection transistor and a memory cell transistor and reduce a cell size, the nonvolatile memory including a semiconductor substrate having a selection transistor and a cell transistor defined thereon, a line form of a first selection gate line formed on the selection transistor region in one direction and a floating gate formed on the cell transistor region in a fixed pattern, an insulating film and a second gate line formed on the first selection gate line at fixed intervals, and an insulating film and a control gate line over the insulating film including the floating gate in a direction the same with the first gate line, impurity regions formed in one region in the semiconductor substrate on both sides of the control gate line and the first selection gate line, a first planar protection film having first contact holes one each to the first selection gate line and to the impurity region, a contact plug in the first contact hole, a conductive layer pattern in contact with the contact plug, a second planar protection film having a contact hole to the conductive layer pattern over the first selection gate line, and a wiring line formed on the second contact hole and the second planar protection film in one direction.

Inventors: Lee; Ki Jik (Chungcheongbuk-do, KR), Yu; Jae Min (Chungcheongbuk-do, KR)

Assignee: Hyundai Electronics Industries Co., Ltd.

International Classification: H01L 21/70 (20060101); H01L 27/115 (20060101); H01L 21/8247 (20060101); H01L 021/824 ()

Expiration Date: 07/03/2018