Patent Number: 6,255,156

Title: Method for forming porous silicon dioxide insulators and related structures

Abstract: A porous silicon dioxide insulator having a low relative dielectric constant of about 2.0 or less is formed from a silicon carbide base layer. Initially, at least one layer of silicon carbide is deposited on a semiconductor substrate. The silicon carbide layer is then etched to form a porous silicon carbide layer, which is oxidized to produce the final porous silicon dioxide layer.

Inventors: Forbes; Leonard (Corvallis, OR), Ahn; Kie Y. (Chappaqua, NY)

Assignee: Micron Technology, Inc.

International Classification: H01L 21/02 (20060101); H01L 23/28 (20060101); H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 23/31 (20060101); H01L 21/316 (20060101); H01L 21/314 (20060101); H01L 021/20 (); H01L 021/36 (); C30B 000/00 ()

Expiration Date: 07/03/2018