Patent Number: 6,255,157

Title: Method for forming a ferroelectric capacitor under the bit line

Abstract: A structure and method for forming an integrated circuit structure including forming at least one transistor structure, forming at least one ferroelectric capacitor above the transistor structure, annealing the ferroelectric capacitor, and forming at least one conductive contact between the transistor structure and the ferroelectric capacitor.

Inventors: Hsu; Louis L. (Fishkill, NY), Kotecki; David E. (Hopewell Junction, NY), Mandelman; Jack A. (Stormville, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 21/8242 (20060101); H01L 021/824 (); H01L 021/00 (); H01L 021/20 (); H01L 029/76 ()

Expiration Date: 07/03/2018