Patent Number: 6,255,161

Title: Method of forming a capacitor and a contact plug

Abstract: A method divides the formation of the contact plug connecting a source/drain region in the peripheral circuit area into two steps, wherein the capacitor can be fabricated at the same time so as to save one mask. Besides, at each step of forming the contact plug with low aspect ratio, a CVD method is utilized to uniformly deposited a barrier layer on the contact window and completely fill the contact window. This can thoroughly eliminate the defects found in the prior art. Consequently, the simplified process can reduce the manufacturing period time and the production cost.

Inventors: Lin; Wei-Ray (Taipei, TW)

Assignee: Nanya Technology Corporation

International Classification: H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 21/8242 (20060101); H01L 021/824 (); H01L 021/476 ()

Expiration Date: 07/03/2018