Patent Number: 6,255,162

Title: Method of gap filling

Abstract: A method of gap filling is provided. A substrate comprising conductive structures thereon is provided. A gap is between the conductive structures. A conformal first dielectric layer is formed on the substrate and is used to protect the conductive structures and the substrate. An implanting process is performed with a high angle to implant impurities into the first dielectric layer. A second dielectric layer is formed on the implanted first dielectric layer to fully fill the gap.

Inventors: Tsai; Yu-Tai (Taichung Hsien, TW), Wu; Huang-Hui (Changhua Hsien, TW), Huang; Chien-Chung (Taichung Hsien, TW), Lai; Yeong-Chih (Nantou, TW)

Assignee: United Microelectronics Corp.

International Classification: H01L 21/02 (20060101); H01L 21/316 (20060101); H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 21/3115 (20060101); H01L 21/314 (20060101); H01L 021/824 ()

Expiration Date: 07/03/2018