Patent Number: 6,255,173

Title: Method of forming gate electrode with titanium polycide structure

Abstract: A method of forming a gate electrode with a titanium polycide structure capable of preventing abnormal oxidation of the gate electrode when performing gate re-oxidation process, is disclosed. In the present invention, after forming a gate electrode having a stacked structure of a polysilicon layer and a titanium silicide layer, thermal-treating is performed under nitrogen atmosphere to form a TiN layer on the side wall of the titanium silicide layer, considering as silicon content of the titanium silicide layer is high, abnormal oxidation decreases. At this time, a titanium silicide layer having deficient Ti is formed on the side wall of the titanium silicide layer adjacent to the TiN layer. Therefore, after removing the TiN layer, the side wall of the titanium silicide layer having excessive Si (or deficient Ti) is exposed. Thereafter, gate re-oxidation process is performed. At this time, abnormal oxidation of the titanium silicide layer is prevented by the titanium silicide layer having excessive silicon.

Inventors: Jang; Se Aug (Kyoungki-do, KR)

Assignee: Hyundai Electronics Industries Co., Ltd.

International Classification: H01L 21/336 (20060101); H01L 21/02 (20060101); H01L 21/28 (20060101); H01L 021/823 ()

Expiration Date: 07/03/2018