Patent Number: 6,255,179

Title: Plasma etch pre-silicide clean

Abstract: A method of preparing silicon semiconductor surfaces prior to metal silicide formation. In particular, it teaches a method of treating about 10 to about 200 .ANG. of a surface of the silicon with a plasma source after activating the source and drain regions, prior to an HF etch and deposition of a metal for silicide formation. Discontinuities in the metal silicide formed on narrow polysilicon lines at the point where source and drain regions intersect are surprisingly diminished. This results in more continuous, uniform silicide formation hence the polysilicon lines and the source and drain regions have substantially lower resistance.

Inventors: Cantell; Marc W. (Sheldon, VT), Giewont; Kenneth (Hopewell Junction, NY), Lasky; Jerome B. (Essex Junction, VT), Peterson; Kirk D. (Essex Junction, VT)

Assignee: International Business Machines Corporation

International Classification: H01L 21/02 (20060101); H01L 21/285 (20060101); H01L 21/306 (20060101); H01L 021/336 (); H01L 021/320 (); H01L 021/476 (); H01L 021/44 ()

Expiration Date: 07/03/2018