Patent Number: 6,255,185

Title: Two step anneal for controlling resistor tolerance

Abstract: A method of controlling the resistance and improving the low temperature tolerance of a polysilicon resistor is provided. The method of the present invention employs a second annealing step after one of the high temperature (about 800.degree. C. or above) device activation anneals. That is, the second annealing step can be used after source/drain activation, emitter activation or silicide formation. In accordance with the present invention, if a low temperature second annealing step below about 800.degree. C. is performed after the high temperature device activation anneal, the resistance of the resistor increases, whereas when the second annealing temperature is higher than about 800.degree. C., the resistance of the resistor decreases.

Inventors: Coolbaugh; Douglas Duane (Essex Junction, VT), Miller; Glenn Robert (Essex Junction, VT), Ratenberg; Sophia Maumovna (Williston, VT)

Assignee: International Business Machines Corporation

International Classification: H01L 21/02 (20060101); H01L 021/20 ()

Expiration Date: 07/03/2018