Patent Number: 6,255,195

Title: Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method

Abstract: In a method for forming a bonded semiconductor-on-insulator substrate for the fabrication of semiconductor devices and integrated circuits, a surface of a wafer of a monocrystalline semiconductor material is implanted with ions of the semiconductor material a to a selected depth in the wafer to form, adjacent to the surface, an amorphous layer of the semiconductor material. The layer of amorphous semiconductor material extends to a substantially planar zone disposed at substantially the selected depth and comprising the monocrystalline semiconductor material damaged by lattice defects, i.e., end-of-range implant damage. Undamaged material below the selected depth comprises a first layer of the monocrystalline semiconductor material. The wafer is heated under conditions effective to convert the amorphous layer to a second layer of the monocrystalline semiconductor material and to coalesce the zone of damaged monocrystalline semiconductor material, thereby forming a substantially planar intrinsic gettering zone of substantially pure semiconductor material that includes active gettering sites disposed at substantially the selected depth. An insulating bond layer on one surface of a handle wafer is bonded to the surface of the wafer to form a bonded semiconductor-on-insulator substrate comprising a handle wafer, an insulating bond layer, and a device wafer of monocrystalline semiconductor material. The device wafer includes a substantially planar intrinsic gettering zone comprising substantially pure semiconductor material and including active gettering sites. The described bonded substrate is employed in the fabrication of semiconductor devices and integrated circuits.

Inventors: Linn; Jack H. (Melbourne, FL), Speece; William H. (Palm Bay, FL), Shlepr; Michael G. (Palm Bay, FL), Rouse; George V. (Indialantic, FL)

Assignee: Intersil Corporation

International Classification: H01L 21/762 (20060101); H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 21/20 (20060101); H01L 21/322 (20060101); H01L 021/30 (); H01L 021/46 (); H01L 021/322 (); H01L 021/20 (); H01L 021/36 ()

Expiration Date: 07/03/2018