Patent Number: 6,255,199

Title: Method of producing polycrystalline silicon

Abstract: A thin film transistor to be adapted to each pixel switch in a liquid crystal display has a polycrystalline silicon layer which is acquired by crystallizing amorphous silicon deposited on a glass substrate by laser annealing. A characteristic curve indicating the intensity distribution of a laser beam in this laser annealing has a peak shifted on the upstream side in the direction the glass substrate is moved. In the laser annealing of amorphous silicon, the laser beam is irradiated on the amorphous silicon in such a way that a higher-intensity portion of the laser beam hits the amorphous silicon first. This can make the fluence margin of a laser beam in laser annealing wide enough to achieve a high field-effect mobility and a high yield.

Inventors: Mitsuhashi; Hiroshi (Kumagaya, JP), Kawakyu; Yoshito (Kawasaki, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 21/02 (20060101); H01L 21/20 (20060101); H01L 021/20 ()

Expiration Date: 07/03/2018