Patent Number: 6,255,200

Title: Polysilicon structure and process for improving CMOS device performance

Abstract: A process for depositing polycrystalline silicon, including exposing a semiconductor substrate on which the polycrystalline silicon is to be deposited to a silicon containing gas and a temperature of about 680.degree. C. to about 800.degree. C.

Inventors: Ballantine; Arne W. (South Burlington, VT), Chan; Kevin K. (Staten Island, NY), Langdeau; Gary L. (Burlington, VT), Rice; Michael B. (Colchester, VT)

Assignee: International Business Machines Corporation

International Classification: C23C 16/22 (20060101); C23C 16/24 (20060101); H01L 21/285 (20060101); H01L 21/02 (20060101); H01L 021/36 ()

Expiration Date: 07/03/2018