Patent Number: 6,255,201

Title: Method and device for activating semiconductor impurities

Abstract: An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light 5 may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 .mu.m to 11 .mu.m. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light 5 may be within the range of 9.5 .mu.m to 10 .mu.m.

Inventors: Yoshida; Akihisa (Kyoto, JP), Kitagawa; Masatoshi (Hirakata, JP), Uchida; Masao (Ibaraki, JP), Kitabatake; Makoto (Nara, JP), Mitsuyu; Tsuneo (Hirakata, JP)

Assignee: Matsushita Electric Industrial Co., Ltd.

International Classification: H01L 21/02 (20060101); H01L 21/04 (20060101); H01L 29/66 (20060101); H01L 29/861 (20060101); H01L 29/02 (20060101); H01L 29/24 (20060101); H01L 021/42 ()

Expiration Date: 07/03/2018