Patent Number: 6,255,204

Title: Method for forming a semiconductor device

Abstract: A first metal-containing material (22) is formed over a semiconductor device substrate (10). A second metal-containing material (32) is formed over the first metal containing material (22). The combination of the second metal-containing material (32) formed over the first metal-containing material (22) forms a metal stack (34). The metal stack (34) is annealed and a post-anneal stress of the metal stack (34) is less than an individual post-anneal stress of either one of the first conductive film (22) or the second conductive film (32).

Inventors: Tobin; Philip J. (Austin, TX), Adetutu; Olubunmi O. (Austin, TX), Hegde; Rama I. (Austin, TX), Maiti; Bikas (Austin, TX)

Assignee: Motorola, Inc.

International Classification: H01L 21/336 (20060101); H01L 21/02 (20060101); H01L 21/28 (20060101); H01L 29/49 (20060101); H01L 29/40 (20060101); H01L 021/476 ()

Expiration Date: 07/03/2018