Patent Number: 6,255,205

Title: High density programmable read-only memory employing double-wall spacers

Abstract: The present invention provides an EPROM and a method for forming the same having increased density. The invention does so by reducing the area required for formation of a contact. Specifically, a storage cell for an electrically programmable read-only memory having a pair of spaced-apart gate structures, with a double wall spacer structure disposed on opposite sides of each gate structure.

Inventors: Sung; Kuo-Tung (Hsinchu, TW)

Assignee: Mosel Vitelic, Inc.

International Classification: H01L 27/115 (20060101); H01L 21/70 (20060101); H01L 21/8247 (20060101); H01C 021/824 ()

Expiration Date: 07/03/2018