Patent Number: 6,255,206

Title: Method of forming gate electrode with titanium polycide structure

Abstract: A method of forming a gate electrode with a titanium polycide structure which can prevent abnormal oxidation of the gate electrode and reduce the resistivity of the gate electrode when performing a re-oxidation process, is disclosed. According to the present invention, a gate oxide layer, a polysilicon layer and a titanium silicide layer are formed on a semiconductor substrate, in sequence. A mask insulating layer is then formed in the shape of a gate electrode on the titanium silicide layer and the titanium silicide layer and the polysilicon layer are etched using the mask insulating layer to form a gate electrode. Thereafter, the substrate is oxidized using re-oxidation process to form an oxide layer with a uniform thickness on the side wall of the gate electrode and on the surface of the substrate. Here, the re-oxidation process is performed at the temperature of 750.degree. C. or less using dry oxidation. Furthermore, the re-oxidation process is performed at the temperature of 700 to 750.degree. C. and the oxide layer is formed to the thickness of 30 to 60 .ANG., preferably, about 50 .ANG..

Inventors: Jang; Se Aug (Kyoungki-do, KR), Kim; Tae Kyun (Kyoungki-do, KR), Yeo; In Seok (Kyoungki-do, KR), Lee; Sahng Kyoo (Seoul, KR)

Assignee: Hyundai Electronics Industries Co., Ltd.

International Classification: H01L 21/02 (20060101); H01L 21/28 (20060101); H01L 21/316 (20060101); H01L 021/320 (); H01L 021/476 ()

Expiration Date: 07/03/2018