Patent Number: 6,255,211

Title: Silicon carbide stop layer in chemical mechanical polishing over metallization layers

Abstract: Silicon carbide (SiC) is used as the stop layer for the chemical-mechanical polishing used to planarize the surface of interlevel dielectrics, making the resistance of the vias more uniform. Alternatively, silicon carbonitride or silicon carboxide can be used in place of silicon carbide.

Inventors: Olsen; Leif C. (Plano, TX), Swanson; Leland S. (McKinney, TX)

Assignee: Texas Instruments Incorporated

International Classification: H01L 21/02 (20060101); H01L 21/3105 (20060101); H01L 21/314 (20060101); H01L 21/3213 (20060101); H01L 021/476 ()

Expiration Date: 07/03/2018