Patent Number: 6,255,212

Title: Method of making a void-free aluminum film

Abstract: A method for depositing an aluminum film limits the growth of voids and notches in the aluminum film and forms and aluminum film with a reduced amount of voids and notches. The first step of the method is to form an underlying layer upon which is deposited an aluminum film having a first thickness. The surface of the aluminum film is then exposed to a passivation species which coats the aluminum grains and precipitates at the grain boundaries so as to prevent grain movement. The exposure of the aluminum film to the passivation species reduces void formation and coalescence of the voids. An aluminum layer having a second thickness is then deposited over the initially deposited aluminum layer. In a second embodiment of the invention, the passivation species is deposited with MOCVD and to form an electromigration-resistant alloy. A third embodiment involves multiple depositions of aluminum, with exposure to a passivation species conducted after each deposition. Each deposition is also conducted at a successively lower temperature than the prior deposition.

Inventors: Sandhu; Gurtej S. (Boise, ID), Iyer; Ravi (Boise, ID)

Assignee: Micron Technology, Inc.

International Classification: H01L 23/52 (20060101); H01L 23/485 (20060101); H01L 23/48 (20060101); H01L 23/532 (20060101); H01L 021/44 (); H01L 021/476 ()

Expiration Date: 07/03/2018