Patent Number: 6,255,215

Title: Semiconductor device having silicide layers formed using a collimated metal layer

Abstract: A process for forming a silicide layer using a metal layer formed by collimated deposition is provided. The collimated metal layer may, for example, be formed by sputtering metal particles and filtering the metal particles prior to forming the metal layer. By depositing metal in this manner, the resistance of the resultant metal silicide layer can be reduced as compared to metal silicide layers formed using conventional techniques. Lower silicidation reaction temperatures may also be employed.

Inventors: Hause; Fred (Austin, TX), May; Charles E. (Austin, TX), Brennan; William S. (Austin, TX)

Assignee: Advanced Micro Services

International Classification: H01L 21/02 (20060101); H01L 21/285 (20060101); H01L 021/44 ()

Expiration Date: 07/03/2018