Patent Number: 6,255,216

Title: Methods of forming a contact having titanium silicide and titanium formed by chemical vapor deposition

Abstract: Methods arc provided for forming a contact in an integrated circuit by chemical vapor deposition (CVD). The methods include forming titanium silicide in the contact. One method includes forming titanium silicide by combining a titanium precursor in the presence of hydrogen, H.sub.2. Another method includes forming titanium silicide by combining titanium tetrachloride, TiCl.sub.4, in the presence of hydrogen. A further method includes forming titanium silicide by combining tetradimethyl amino titanium, Ti(N(CH.sub.3).sub.2).sub.4, in the presence of hydrogen. The methods may further include forming titanium in the contact.

Inventors: Doan; Trung T. (Boise, ID), Sandhu; Gurtej Singh (Boise, ID), Prall; Kirk (Boise, ID), Sharan; Sujit (Boise, ID)

Assignee: Micron Technology, Inc.

International Classification: C23C 16/02 (20060101); C23C 16/42 (20060101); H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 21/285 (20060101); H01L 21/768 (20060101); H01L 021/44 ()

Expiration Date: 07/03/2018