Patent Number: 6,255,217

Title: Plasma treatment to enhance inorganic dielectric adhesion to copper

Abstract: The present invention utilizes a reducing plasma treatment step to enhance the adhesion of a subsequently deposited inorganic barrier film to a copper wire or via present in a semiconductor interconnect structure such as a dual damascene structure.

Inventors: Agnello; Paul D. (Wappingers Falls, NY), Buchwalter; Leena P. (Hopewell Junction, NY), Hummel; John (Millbrook, NY), Luther; Barbara (Cold Spring, NY), Stamper; Anthony K. (Williston, VT)

Assignee: International Business Machines Corporation

International Classification: H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 21/318 (20060101); H01L 21/04 (20060101); H01L 021/44 ()

Expiration Date: 07/03/2018