Patent Number: 6,255,222

Title: Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process

Abstract: A method of minimizing particle or residue accumulation within an exhaust line of a substrate processing chamber having a downstream plasma apparatus connected to the exhaust line. One embodiment of the method turns ON the downstream plasma apparatus during a substrate deposition step and a chamber clean operation, and switches the downstream plasma apparatus OFF at other times including the time during which purge gases are flowed into the chamber and various chamber set up or conditioning steps are performed. The method includes depositing a film over a substrate disposed in the substrate processing chamber by (i) flowing a deposition gas into the substrate processing chamber, exhausting at least some of the deposition gas from the processing chamber through an exhaust line and into the downstream plasma apparatus, and forming a plasma within the downstream plasma apparatus; and then (ii) stopping the flow of the deposition gas, turning the plasma OFF, and flowing a purge gas into the substrate processing chamber. After one or more film deposition steps, the chamber is cleaned to remove film deposition from the interior surfaces of the chamber by (i) flowing an etchant into the substrate processing chamber, exhausting the etchant from the substrate processing chamber through an exhaust line and into the downstream plasma apparatus, and forming a plasma within the downstream plasma apparatus; and then (ii) stopping the flow of the etchant, turning the plasma OFF, and flowing a purge gas into the substrate processing chamber.

Inventors: Xia; Li-Qun (San Jose, CA), Pokharrna; Himanshu (San Jose, CA), Lim; Tian-Hoe (Santa Clara, CA)

Assignee: Applied Materials, Inc.

International Classification: B01D 53/32 (20060101); C23C 16/44 (20060101); H01L 021/00 ()

Expiration Date: 07/03/2018