Patent Number: 6,255,225

Title: Method of forming a resist pattern, a method of manufacturing semiconductor device by the same method, and a device and a hot plate for forming a resist pattern

Abstract: A method of forming a resist pattern and a method of manufacturing a semiconductor device using the method of forming the resist pattern, characterized in that a surface of an organic base coating 3 formed on an etched film 2 is reformed depending on properties of a material of a resist film 4, whereby, in dual processes for forming a lower layer of the organic coating provided to process the etched film, an amount of usable resist is increased and an accuracy of dimensions of the etched film after processing can be improved.

Inventors: Yamada; Yoshiaki (Tokyo, JP), Ishikawa; Eiichi (Tokyo, JP)

Assignee: Mitsubishi Denki Kabushiki Kaisha

International Classification: H01L 21/02 (20060101); H01L 21/027 (20060101); G03F 7/09 (20060101); H01L 21/312 (20060101); H01L 021/302 ()

Expiration Date: 07/03/2018