Patent Number: 6,255,227

Title: Etching process of CoSi2 layers

Abstract: The present invention relates to methods for controlling the etching rate of CoSi.sub.2 layers by adjusting the pH of an HF-based solution to obtain the desired etch rate. The pH of the HF-based solution may be adjusted by adding pH modifying chemicals to the solution. A further aspect of the invention is an improved method for manufacturing Schotky barrier infared detectors employing the controlled etching step. A method for reducing drain induced barrier lowering in an active transistor having a small gate length is also provided.

Inventors: Donaton; Ricardo Alves (Heverlee, BE), Maex; Karen Irma Josef (Herent, BE), Verbeeck; Rita (Rotselaar, BE), Jansen; Philippe (Olen, BE), Rooyackers; Rita (Leuven, BE), Deferm; Ludo (Beverloo, BE), Baklanov; Mikhail Rodionovich (Leuven, BE)

Assignee: Interuniversitair Microelektronica Centrum

International Classification: H01L 21/336 (20060101); H01L 21/02 (20060101); H01L 21/265 (20060101); H01L 21/3213 (20060101); H01L 31/102 (20060101); H01L 31/108 (20060101); H01L 29/02 (20060101); H01L 29/10 (20060101); H01L 021/302 (); H01L 021/00 ()

Expiration Date: 07/03/2018