Patent Number: 6,255,228

Title: Method for removing contaminants from a semiconductor wafer

Abstract: A method for removing contaminants from a semiconductor wafer having a spin on coating of material. Contaminants are removed by applying a cleaning solution to the periphery, and preferably, the exposed backside of the wafer after the edge bead has been dissolved and removed. The cleaning solution is formulated to react chemically with unwanted coating material residue to form a compound that may be ejected from the periphery of the spinning wafer. Any residual solution or precipitate that is not ejected from the wafer may be rinsed away with water, preferably deoinized water. One exemplary use of this method is the removal of metallic contaminants that may be left on the periphery and backside of a wafer after the formation of ferroelectric film coatings. A cleaning solution comprising a mixture of hydrochloric acid HCl and water H.sub.2 O or ammonium hydroxide NH.sub.4 OH and water H.sub.2 O is applied to the periphery of the spinning wafer. The cleaning solution will react with any residual metal ions to form a metal chloride or metal hydroxide that is ejected from the wafer along with the cleaning solution.

Inventors: Rolfson; J. Brett (Boise, ID)

Assignee: Micron Technology, Inc.

International Classification: H01L 21/00 (20060101); H01L 021/02 (); B05D 003/10 (); B05D 003/12 ()

Expiration Date: 07/03/2018