Patent Number: 6,255,229

Title: Method for forming semiconductor dielectric layer

Abstract: A method for forming a semiconductor dielectric layer comprising the steps of providing a substrate having a plurality of semiconductor devices already formed thereon, and then forming a first dielectric layer over the substrate. Next, a silicon oxy-nitride layer is formed over the first dielectric layer, and finally a second dielectric layer is formed over the silicon oxy-nitride layer.

Inventors: Lin; Kevin (Taipei Hsien, TW), Chern; Horng-Nan (Tainan Hsien, TW), Lin; Kun-Chi (Hsinchui, TW)

Assignee: United Microelectronics Corp.

International Classification: H01L 21/02 (20060101); H01L 21/314 (20060101); H01L 21/316 (20060101); H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 021/469 (); H01L 021/31 ()

Expiration Date: 07/03/2018