Patent Number: 6,255,230

Title: Method for modifying a film forming surface of a substrate on which a film is to be formed, and method for manufacturing a semiconductor device using the same

Abstract: Disclosed is a method for modifying a film-forming surface of a substrate, which is capable removing a base surface dependency in forming a film on the film-forming surface of the substrate prior to formation of a film by a thermal CVD method using a reactant gas containing an ozone-containing gas containing ozone (O.sub.3) in oxygen (O.sub.2) and Tetra-Ethyl-Ortho-Silicate. The method comprises the step of modifying the film-forming surface 12a of the substrate 102 by allowing any one of ammonia, hydrazine, an amine, gases thereof and aqueous solutions thereof to contact with the surface of the substrate before forming an insulating film 13 on the surface 12a of the substrate 102.

Inventors: Ikakura; Hiroshi (Tokyo, JP), Nishikawa; Syunji (Tokyo, JP), Tokumasu; Noboru (Tokyo, JP), Azumi; Takayoshi (Tokyo, JP)

Assignee: Canon Sales Co., Inc.

International Classification: C23C 16/02 (20060101); C23C 16/40 (20060101); H01L 21/02 (20060101); H01L 21/316 (20060101); H01L 021/31 (); H01L 021/469 ()

Expiration Date: 07/03/2018