Patent Number: 6,255,232

Title: Method for forming low dielectric constant spin-on-polymer (SOP) dielectric layer

Abstract: A method for forming a dielectric layer upon a substrate within a microelectronics fabrication. There is provided a substrate. There is then formed upon the substrate while employing a low dielectric constant spin-on material a dielectric layer which is subsequently cured at atmospheric pressure at an elevated temperature to stabilize the physical and chemical properties of the low dielectric constant dielectric layer so as to attenuate shrinkage and other changes in those physical, and chemical properties from thermal annealing at sub-atmospheric pressure due to typical further microelectronics fabrication processing steps.

Inventors: Chang; Weng (Taipei, TW), Cheng; Yao-Yi (Taipei, TW), Jang; Syun-Ming (Hsin-Chu, TW)

Assignee: Taiwan Semiconductor Manufacturing Company

International Classification: H01L 21/02 (20060101); H01L 21/312 (20060101); H01L 021/469 (); H01L 021/476 ()

Expiration Date: 07/03/2018