Patent Number: 6,255,233

Title: In-situ silicon nitride and silicon based oxide deposition with graded interface for damascene application

Abstract: A structure to enable damascene copper semiconductor fabrication is disclosed. There is a silicon nitride film for providing a diffusion barrier for Cu as well as an etch stop for the duel damascene process. Directly above the silicon nitride film is a silicon oxynitride film. The silicon oxynitride film is graded, to form a gradual change in composition of nitrogen and oxygen within the film. Directly above the silicon oxynitride film is silicon oxide. The silicon oxide serves as an insulator for metal lines. Preferably, the film stack of silicon nitride, silicon oxynitride and silicon oxide is all formed in sequence, within the same plasma-processing chamber, by modifying the composition of film-forming gases for forming each film.

Inventors: Smith; Preston (Portland, OR), Choi; Chi-hing (Portland, OR)

Assignee: Intel Corporation

International Classification: H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 21/314 (20060101); H01L 021/31 ()

Expiration Date: 07/03/2018