Patent Number: 6,281,571

Title: Semiconductor device having an external connection electrode extending through a through hole formed in a substrate

Abstract: External connection electrodes can be positively mounted on a substrate when the pitch between the external connection electrodes is reduced and the diameter of each through hole formed in the substrate is reduced. A semiconductor chip is mounted on a first surface of a tape substrate. Electrode films are formed on the first surface of the tape substrate, each of the electrode films electrically connected to the semiconductor chip. External connection electrodes are provided on a second surface of the tape substrate, each of the external connection electrodes connected to a respective one of the electrode films via a through hole formed in the tape substrate. The external connection electrodes are formed on the electrode films by plating. A diameter S1 of a portion of each of the external connection electrodes protruding from the second surface of the tape substrate and a diameter S2 of the through hole satisfy a relationship S1.ltoreq.S2.

Inventors: Takashima; Akira (Kawasaki, JP), Ando; Fumihiko (Kawasaki, JP), Sato; Mitsuru (Kawasaki, JP), Suzuki; Takashi (Kawasaki, JP), Kumagaya; Yoshikazu (Kawasaki, JP), Kosakai; Kazunari (Kawasaki, JP)

Assignee: Fujitsu Limited

International Classification: H01L 23/48 (20060101); H05K 3/34 (20060101); H01L 23/498 (20060101); H01L 21/02 (20060101); H01L 21/58 (20060101); H01L 023/04 ()

Expiration Date: 08/28/2018