Patent Number: 6,293,137

Title: Hydrogen sensor

Abstract: In this invention, we propose a high-sensitivity Pd/InP hydrogen sensor. First, a n-type InP semiconductor membrane is grown on a semi-insulating InP substrate. The concentration and thickness of this membrane are 2.times.10.sup.17 cm.sup.-3 and 3000 .ANG., respectively. Then, Pd metal and AuGe alloy are evaporated on the surface of the membrane as the anode and cathode electrodes, respectively. Due to the catalytic performance of Pd metal, the adsorbed hydrogen molecules on the surface of the Pd metal are dissociated into hydrogen atoms. The hydrogen atoms diffuse and pass through the Pd metal and form a dipole layer at the interface between the Pd metal and the n-type InP membrane. This dipole layer will decrease the depletion width of the n-type InP membrane and further lower the metal-semiconductor Schottky barrier height. Therefore, the current-voltage (I-V) characteristics will be modulated after the introduction of hydrogen gas.

Inventors: Liu; Wen-Chau (Tainan, TW), Chen; Huey-lng (Tainan, TW), Pan; Hsi-Jen (Tainan, TW)

Assignee: National Science Council

International Classification: G01N 27/00 (20060101); G01N 33/00 (20060101); H01L 21/02 (20060101); H01L 21/285 (20060101); G01N 007/00 (); G01N 027/00 ()

Expiration Date: 09/25/2018