Patent Number: 6,294,726

Title: Silicon with structured oxygen doping, its production and use

Abstract: The present invention relates to silicon with a high oxygen content and, at the same time, a high density of crystal lattice dislocations, and to its production. This silicon may be used in photovoltaics. Solar cells which are based on the material according to the invention exhibit high levels of efficiency despite the high oxygen content.

Inventors: Hassler; Christian (Krefeld, DE), Hofs; Hans-Ulrich (Krefeld, DE), Koch; Wolfgang (Krefeld, DE), Thurm; Siegfried (Meerbusch, DE), Breitenstein; Otwin (Langenbogen, DE)

Assignee: Bayer Aktiengesellschaft

International Classification: C30B 15/34 (20060101); C30B 15/00 (20060101); H01L 031/00 ()

Expiration Date: 09/25/2018