Patent Number: 6,294,795

Title: Light-receiving device with quantum-wave interference layers

Abstract: A light-receiving device of a pin junction structure, constituted by a quantum-wave interference layers Q.sub.1 to Q.sub.4 with plural periods of a pair of a first layer W and a second layer B and carrier accumulation layers C.sub.1 to C.sub.3. The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of wavelength of quantum-wave of carriers in each of the first layer W and the second layer B existing at the level near the lowest energy level of the second layer B. A .delta. layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. As a result, when electrons are excited in the carrier accumulation layers C.sub.1 to C.sub.3, electrons are propagated through the quantum-wave interference layer from the n-layer to the p-layer as a wave, and electric current flows rapidly.

Inventors: Kano; Hiroyuki (Aichi, JP)

Assignee: Canare Electric Co., Ltd.

International Classification: H01L 31/0352 (20060101); H01L 31/0248 (20060101); H01L 029/868 (); H01L 031/035 ()

Expiration Date: 09/25/2018