Patent Number: 6,294,796

Title: Thin film transistors and active matrices including same

Abstract: Thin film transistor including polycrystalline silicon or amorphous silicon thin film channel regions having a thickness of between about 100 .ANG. and 2500 .ANG. which are thinner than at least a portion of the source and drain regions and active matrix assemblies including thin film transistors for improved electro-optical displays are provided.

Inventors: Mano; Toshihiko (Nagano-ken, JP), Kodaira; Toshimoto (Nagano-ken, JP), Oshima; Hiroyuki (Nagan-ken, JP)

Assignee: Seiko Epson Corporation

International Classification: G02F 1/13 (20060101); H01L 21/70 (20060101); H01L 29/66 (20060101); G02F 1/1368 (20060101); H01L 29/786 (20060101); H01L 27/12 (20060101); H01L 21/84 (20060101); H01L 27/13 (20060101); H01L 21/336 (20060101); H01L 21/02 (20060101); G02F 1/1362 (20060101); H01L 029/04 ()

Expiration Date: 09/25/2018