Patent Number: 6,294,799

Title: Semiconductor device and method of fabricating same

Abstract: A semiconductor device having reliable electrode contacts. First, an interlayer dielectric film is formed from a resinous material. Then, window holes are formed. The interlayer dielectric film is recessed by oxygen plasma. This gives rise to tapering window holes. This makes it easy to make contacts even if the circuit pattern is complex.

Inventors: Yamazaki; Shunpei (Tokyo, JP), Fukunaga; Takeshi (Kanagawa, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: H01L 23/532 (20060101); H01L 29/66 (20060101); H01L 23/52 (20060101); H01L 23/522 (20060101); H01L 29/786 (20060101); H01L 029/04 ()

Expiration Date: 09/25/2018