Patent Number: 6,294,801

Title: Semiconductor device with Schottky layer

Abstract: A semiconductor device includes a Schottky layer, a cap layer covering the surface of the Schottky layer, and a Schottky electrode of a two-level structure. The Schottky electrode has a lower portion that penetrates through the cap layer and reaches the Schottky layer, and has an upper portion larger than the lower portion in cross-sectional area and that overlies the cap layer. With this construction, surface defects are unlikely to occur, so that a highly reliable semiconductor device can be fabricated.

Inventors: Inokuchi; Kazuyuki (Tokyo, JP), Takahashi; Seiichi (Tokyo, JP), Hoshi; Shinichi (Tokyo, JP), Saito; Tadashi (Tokyo, JP), Yamamoto; Nobusuke (Tokyo, JP), Itoh; Yuko (Tokyo, JP), Higemoto; Nobumasa (Tokyo, JP)

Assignee: Oki Electric Industry Co., Ltd.

International Classification: H01L 21/02 (20060101); H01L 29/66 (20060101); H01L 29/778 (20060101); H01L 21/338 (20060101); H01L 29/417 (20060101); H01L 29/40 (20060101); H01L 21/3065 (20060101); H01L 31/06 (20060101); H01L 31/0328 (20060101); H01L 31/102 (20060101); H01L 31/0264 (20060101); H01L 31/072 (20060101); H01L 29/812 (20060101); H01L 31/0336 (20060101); H01L 31/109 (20060101); H01L 031/072 (); H01L 031/109 (); H01L 031/032 (); H01L 031/033 ()

Expiration Date: 09/25/2018