Patent Number: 6,294,802

Title: Field effect transistor and method of manufacturing the same

Abstract: A field effect transistor has an InGaAs channel layer and an InGaP electron donor layer on a GaAs substrate. A natural superlattice is formed in the crystal of the InGaP electron donor layer, and a gate finger is formed to run in the [-110] direction. A method of manufacturing this field effect transistor is also disclosed.

Inventors: Unozawa; Kousei (Tokyo, JP)

Assignee: NEC Corporation

International Classification: H01L 21/02 (20060101); H01L 29/66 (20060101); H01L 29/02 (20060101); H01L 29/778 (20060101); H01L 21/285 (20060101); H01L 21/335 (20060101); H01L 29/04 (20060101); H01L 031/032 ()

Expiration Date: 09/25/2018