Patent Number: 6,294,803

Title: Semiconductor device having trench with vertically formed field oxide

Abstract: A semiconductor device includes a substrate, a plurality of active regions on the substrate, the active regions having recessed and elevated types and being alternatively in parallel with the substrate, respectively, and a plurality of first and second field insulating layers at field regions adjacent to the active regions, the first field insulating layer being parallel with the substrate and the second field insulating layer being perpendicular to the substrate.

Inventors: Gil; Gyoung Seon (Kunsan-si, KR)

Assignee: LG Semicon Co., Ltd.

International Classification: H01L 21/762 (20060101); H01L 21/8234 (20060101); H01L 21/70 (20060101); H01L 027/10 ()

Expiration Date: 09/25/2018