Patent Number: 6,294,808

Title: Non-volatile memory cell with field-enhancing floating gate and method for forming the same

Abstract: A non-volatile memory device includes a semiconductor substrate, first and second spaced-apart regions in the substrate and a channel region therebetween, a first dielectric layer disposed over the substrate, and a floating gate disposed over the first dielectric layer. The floating gate extends over a portion of the channel region and a portion of the second region, and includes a top portion, a bottom portion and at least five sides. The device also includes a second dielectric layer having first and second connected sections and a control gate disposed over a portion of the first dielectric layer and a portion of the second dielectric layer. The first section of the second dielectric layer is contiguous with at least two of the five sides of the floating gate and the second dielectric section is disposed over and contiguous with the top portion of the floating gate.

Inventors: Yu; Ta-Lee (Hsinchu, TW)

Assignee: Winbond Electronics Corporation

International Classification: H01L 29/423 (20060101); H01L 29/40 (20060101); H01L 029/788 ()

Expiration Date: 09/25/2018