Patent Number: 6,294,811

Title: Two transistor EEPROM cell

Abstract: A two transistor EEPROM cell is described that is erased by electrontunneling across an entire portion of a tunneling channel and programmedby electron tunneling at an edge of a tunneling drain.

Inventors: Fong; Steven J. (Santa Clara, CA), Li; Xiao-Yu (San Jose, CA)

Assignee:

International Classification:

Expiration Date: 09/25/2013