Patent Number: 6,294,813

Title: Information handling system having improved floating gate tunneling devices

Abstract: A method and structure for textured surfaces in non volatile floating gate tunneling oxide (FLOTOX) devices, e.g. FLOTOX transistors, are provided. The present invention capitalizes on using "self-structured masks" and a controlled etch to form nanometer scale microtip arrays to form the textured surfaces. The present invention further employs atomic layer epitaxy (ALE) to create a very conformal tunnel oxide layer which complements the nanometer scale microtip arrays. The resulting structure provides a higher tunneling current than currently exists in FLOTOX technology. The improved tunneling currents at low voltages can make these FLOTOX devices suitable for replacing DRAMS.

Inventors: Forbes; Leonard (Corvallis, OR), Geusic; Joseph E. (Berkeley Heights, NJ)

Assignee: Micron Technology, Inc.

International Classification: H01L 21/02 (20060101); H01L 29/66 (20060101); H01L 21/28 (20060101); H01L 29/51 (20060101); H01L 29/40 (20060101); H01L 29/788 (20060101); H01L 029/788 ()

Expiration Date: 09/25/2018