Patent Number: 6,294,814

Title: Cleaved silicon thin film with rough surface

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Inventors: Henley; Francois J. (Los Gatos, CA), Cheung; Nathan W. (Albany, CA)

Assignee: Silicon Genesis Corporation

International Classification: H01L 21/70 (20060101); H01L 21/762 (20060101); H01L 21/78 (20060101); H01L 21/223 (20060101); H01L 21/265 (20060101); H01L 21/02 (20060101); H01L 21/20 (20060101); H01L 029/00 ()

Expiration Date: 09/25/2018